The availability of reliable silicon-based laser sources is at the basis of the integration of photonic and microelectronic devices on a single chip with consequent development of wavelength division multiplexing telecommunication systems. A high efficiency Si-based laser source with good stability at room temperature would encourage and push the large scale of integration of electronic and photonic devices within a single chip.
Several techniques have been proposed for generating light with an internal quantum efficiency some order of magnitude greater than that typical of silicon (10-6) by using either electrical or optical pumping. Among them we mention the improvement of some fabrication process steps, reduction of the channels of non-radiative recombination, quantum confinement, the use of silicon nanocrystals (Si-ncs) incorporated in a silica matrix. This last technique is used in combination with Er3+ doping to generate light emission around 1500 nm in silicon, since Er-doped Si-ncs behave as electron-hole pairs trap, and the presence of Er shifts the emission peak to around 1500 nm. In this paper we have pointed out the optical model of a Si-based DBR laser including a Si-ncs Er-doped SiO2 rib waveguide, working at a wavelength in C-band. In particular, after a brief description of the structural and optical properties of the silicon crystals, we report on the model and design of the Er:Si-nc/SiO2 rib waveguide, of the optical cavity and of the Bragg mirrors. Numerical results are in good agreement with the literature.

C. Ciminelli, P. Frascella, M. N. Armenise, "Optical modelling of a Si-based DBR laser source using a nanocrystal Si-sensitized Er-doped silica rib waveguide in the C-band", J. Europ. Opt. Soc. Rap. Public. 08017 Vol 3 (2008)

10.2971/jeos.2008.08017

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