Radiometric and noise characteristics of InAs-rich T2SL MWIR pin photodiodes

E. Giard; R. Taalat; M. Delmas; J.-B. Rodriguez; P. Christol; I. Ribet-Mohamed

doi:10.2971/jeos.2014.14022

Journal of the European Optical Society - Rapid publications, Vol 9 (2014)

Radiometric and noise characteristics of InAs-rich T2SL MWIR pin photodiodes

E. Giard, R. Taalat, M. Delmas, J.-B. Rodriguez, P. Christol, I. Ribet-Mohamed

Abstract

We present a full characterization of the radiometric performances of a type-II InAs/GaSb superlattice pin photodiode operating in the mid-wavelength infrared domain. We first focused our attention on quantum efficiency, responsivity and angular response measurements: quantum efficiency reaches 23% at λ = 2.1 µm for 1 µm thick structure. Noise under illumination measurements are also reported: noise is limited by the Schottky contribution for reverse bias voltage smaller than 1.2 V. The specific detectivity, estimated for 2p field-of-view and 333 K background temperature, was determined equal to 2.29 x 10^10 Jones for -0,8 V bias voltage and 77 K operating temperature.

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