Bose-Einstein condensation in semiconductors: myth or reality?

J. Kasprzak; M. Richard; R. André; L.S. Dang

doi:10.2971/jeos.2008.08023

Journal of the European Optical Society - Rapid publications, Vol 3 (2008)

Bose-Einstein condensation in semiconductors: myth or reality?

J. Kasprzak, M. Richard, R. André, L.S. Dang

Abstract

Bose-Einstein condensation, predicted for a gas of non interacting bosons in 1924 by Einstein, has been demonstrated for the first time in 1995 in a dilute gas of rubidium atoms at temperatures below 10^–6 K. In this work, it is shown that Bose-Einstein condensation can be achieved at around 15 – 20 K in a solid state system by using microcavity polaritons, which are composite bosons of mass ten billion times lighter than that of rubidium atoms.

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References

See for example: http://jilawww.colorado.edu/bec/ and http://cua.mit.edu/ketterle_group/

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