Journal of the European Optical Society - Rapid publications, Vol 5 (2010)

Electro-optically induced absorption in α-Si:H/α-SiCN waveguiding multistacks

S. Rao, F. G. Della Corte, C. Summonte


Electro optical absorption in hydrogenated amorphous silicon (α-Si:H) – amorphous silicon carbonitride (α-SiCxNy) multilayers have been studied in two different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at λ = 1.55 μm through the application of an electric field which induces free carrier accumulation across the multiple insulator/semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations.

© The Authors. All rights reserved. [DOI: 10.2971/jeos.2010.10002]

Full Text: PDF

Citation Details

Cite this article


G. Cocorullo, F. G. Della Corte, and I. Rendina, "Amorphous silicon waveguides and light modulators for integrated photonics realized by low-temperature plasma-enhanced chemical-vapor deposition" Opt. Lett. 21, 2002-2004 (1996).

M. Okamura, and S. Suzuki, "Infrared photodetection using a-Si:H photodiode" IEEE Photonic. Tech. L. 6, 412-414 (1994).

G. Cocorullo, F. G. Della Corte, R. De Rosa, I. Rendina, A. Rubino, and E. Terzini, "Amorphous silicon-based guided-wave passive and active devices for silicon integrated optoelectronics" IEEE J. Sel. Top. Quant. 4, 997-1001 (1998).

B. Han, R. Orobtchouk, T. Benyattou, P. R. A. Binetti, S. Jeannot, J. M. Fedeli, and X. J. M. Leijtens, Comparison of optical passive integrated devices based on three materials for optical clock distribution (European Conference on Integrated Optics, Copenhagen, pp. 1-4, 25-27 April, 2007).

F. G. Della Corte, M. Gagliardi, M. A. Nigro, and C. Summonte, "In-guide pump and probe characterization of photoinduced absorption in hydrogenated amorphous silicon thin films" J. Appl. Phys. 100, 033104 (2006).

M. Zelikson, K. Weiser, A. Chack, and J. Kanicki, "Direct determination of the quadratic electro-optic coefficient in an a-Si:H based waveguide" J. Non-Cryst. Solids 198-200, 107-110 (1996).

G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. Amaral, and A. R. Ramos, "Properties of a-Si:H TFTs using silicon carbonitride as dielectric" J. Non-Cryst. Solids 338-340, 797-801 (2004).

C. A. Barrios, "Electrooptic modulation of multisilicon-on-insulator photonic wires" J. Lightwave Technol. 24, 2146-2155 (2006).

T. S. Moss, G. J. Burrell, and B. Ellis, Semiconductor Opto- Electronics (Butterworth and Co., London, 1973).

RSoft Photonics CAD Layout User Guide (Rsoft Design Group, Inc. Physical Layer Division, 200 Executive Blvd. Ossining, NY 10562).

R. A. Soref, J. Schmidtchen, and K. Petermann, "Large single-mode rib waveguides in Ge-Si and Si-on-SiO2" IEEE J. Quantum Elect. 27, 1971-1974 (1991).

F. G. Della Corte, S. Rao, M. A. Nigro, F. Suriano, and C. Summonte, "Electro-optically induced absorption in a-Si:H/a-SiCN waveguiding multistacks" Opt. Express 16, 7540-7550 (2008).